Транзистор IRFR2405PBF

IRFR2405PBFThe IRFR2405PBF is a HEXFET® seventh generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.

• Advanced process technology
• Dynamic dV/dt rating
• Fast switching
• Fully avalanche rating
• Low static drain-to-source ON-resistance

Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Год: 2015, корпус: D-Pak, инфо: Полевой транзистор, N-канальный, 55 В, 56 А