FQP19N20C, Транзистор MOSFET N-CH 200В 19А [TO-220AB]

FQP19N20C, Транзистор MOSFET N-CH 200В 19А [TO-220AB]The FQP19N20C is a 200V N-channel QFET® MOSFET produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.

• Low gate charge (typical 40.5nC)
• Low Crss (typical 85pF)
• 100% Avalanche tested
• ±30V Gate to source voltage
• 62.5 C/W Thermal resistance, junction to ambient
• 0.9 C/W Thermal resistance, junction to case