SI1308EDL-T1-GE3, МОП-транзистор, N Канал, 1.4 А, 30 В The SI1308EDL-T1-GE3 is a 30V N-channel TrenchFET® Power MOSFET with power dissipation at 500mW.
• PWM optimized for fast switching
• 100% Rg Tested
• Up to 1800V ESD protection
• Halogen-free
Полупроводники — ДискретныеТранзисторыМОП-транзисторы





